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| NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features * * * * Low RDS(on) Optimized Gate Charge Low Inductance SO-8 Package These are Pb-Free Devices http://onsemi.com V(BR)DSS 30 V RDS(on) Typ 3.5 mW @ 10 V 4.2 mW @ 4.5 V D ID Max (Note 1) 31 A Applications * Notebooks, Graphics Cards * DC-DC Converters * Synchronous Rectification MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1 ) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, Tstg IS EAS ID TA = 25C TA = 85C TA = 25C PD TA = 25C 6.9 11 8.0 0.9 94 -55 to 150 7.0 450 W A C A mJ A Symbol VDSS VGS ID Value 30 $20 18 13 31 2.2 W Unit V V A G S MARKING DIAGRAM D 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 4120N A Y WW G S S S G D 4120N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package TL 260 C (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case - Steady State Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJC RqJA RqJA RqJA Value 1.7 55.8 18 139.1 Unit C/W ORDERING INFORMATION Device NTMFS4120NT1G Package SO-8 FL (Pb-Free) SO-8 FL (Pb-Free) Shipping 1500 Tape & Reel NTMFS4120NT3G 5000 Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 1.0 in sq). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 3 Publication Order Number: NTMFS4120N/D NTMFS4120N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage emperature Coefficient T Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 21 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA VGS(TH) VGS(TH)/TJ RDS(on) 1.0 7.4 2.5 V mV/C VGS = 10 V, ID = 26 A VGS = 4.5 V, ID = 24 A 3.5 4.2 35 4.5 5.5 mW Forward Transconductance gFS VDS = 15 V, ID = 26 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 6.0 A TJ = 25C TJ = 125C 0.74 0.6 36 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.0 A 18 18 34 nC ns 1.0 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 3.0 W 24 32 27 31 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 24 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 3600 640 380 33 4.4 13 14 1.0 W 50 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4120N TYPICAL PERFORMANCE CURVES 80 VGS = 3.8 V to 10 V ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3.0 V 2.8 V 3.2 V 3.4 V TJ = 25C ID, DRAIN CURRENT (AMPS) 3.6 V 80 70 60 50 40 30 20 10 0 1 TJ = -55C TJ = 25C TJ = 125C 3 2 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.008 0.007 VGS = 10 V TJ = 125C 0.007 Figure 2. Transfer Characteristics TJ = 25C 0.006 VGS = 4.5 V 0.005 0.006 0.005 0.004 0.003 TJ = 25C TJ = -55C 0.004 VGS = 10 V 0.003 0.002 0.001 10 20 30 40 50 60 70 80 0.002 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 26 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.2 1000 TJ = 125C 1 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMFS4120N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6000 TJ = 25C C, CAPACITANCE (pF) 5000 Ciss 4000 3000 2000 1000 Coss Crss 5 QT 4 QGS 3 QGD VGS 2 VDD = 15 V VGS = 4.5 V ID = 24 A TJ = 25C 5 20 25 10 15 QG, TOTAL GATE CHARGE (nC) 30 35 1 0 0 0 5 10 15 20 25 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) 45 40 35 30 25 20 15 10 5 0 0.5 0.7 0.9 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 VGS = 0 V TJ = 25C 100 tf tr td(off) td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 500 450 400 350 300 250 200 150 100 50 0 25 Figure 10. Diode Forward Voltage vs. Current ID = 30 A 100 10 ms 10 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 100 ms 1 ms 10 ms 1 0.1 0.01 dc 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs Starting Junction Temperature http://onsemi.com 4 NTMFS4120N 1 D = 0.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 1E-04 SINGLE PULSE 1E-03 1E-02 1E-01 t, TIME (seconds) 1E+00 1E+01 1E+02 1E+03 Figure 13. Thermal Response http://onsemi.com 5 NTMFS4120N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X 0.20 C D 2 D1 6 5 A B 0.20 C 4X E1 2 E c 1 2 3 4 q A1 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ SOLDERING FOOTPRINT* DETAIL A 3X 4X b e/2 1 4 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 1.270 0.750 4X 0.10 0.05 CAB c L 1.000 0.965 1.330 2X K E2 L1 6 5 0.905 4.530 0.475 2X 0.495 M 3.200 G D2 BOTTOM VIEW 4.560 2X 1.530 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTMFS4120N/D |
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